Hi,
If there is oxide remaing on a blanket silicon wafer (assume <50A, Ptype 0100), if this wafer go through a high temperature oxide grow (1100C, N2/O2/TLC), will there be a enlargement on the remaining oxide thickness compare to 0A oxide area?
If yes, what is the mechanism? is it TLC or...
HI,
Is anybody know what is the wafer surface condition after nitdride film stripped?
Focus on 0100 P-Type test wafer.
Through continuous recycling, will the surface be more porous and causing some out gasing or particle came out?
Hi IRstuff,
Thanks for the reply.
This product is mass production, the affected run having 125 wafers (max. loading 150 wafers)
Total 4 monitoring wafers which cover from top to bottom zone accross whole tube (vertical furnace)
On and off we do observed the issue but this time round the...
Hi all,
I am from Diffusion Module, process engineer.
Recently i encountered an issue on oxide uniformity.
There are total 4 monitoring wafers in this run, 2nd wafer showed bad uniformity while other 3 wafers showed typical trend.
Total 5 production lot in this batch, the affected control wafer...
