Collector Base Reverse Saturation Current

[SpaceElectronics]

Does Collector-Base Reverse Saturation Current depend on the applied collector base voltage?

Thank you very much.

 

[MacGyverS2000]

Sounds like a homework question... why do you ask?

Dan - Owner

http://www.Hi-TecDesigns.com

 

[IRstuff]

Review your textbook's Ebers-Moll model.

TTFN

 

[SpaceElectronics]

In the Microsemi date sheet Icbo is specified as 10uA for Vcb=75V and 10nA for Vcb=60V.

 

[MacGyverS2000]

We still have to ask... what is the purpose of your question?

Dan - Owner

http://www.Hi-TecDesigns.com

 

[SpaceElectronics]

In the circuit I am designing the collector-base reverse saturation current of PNP transistors can eventually turn one PNP transistor at high temp. I ma wandering if the Icbo depends only on temperaure or on the Vcb as well.
In the Microsemi data sheet Icbo for 2N2222 is specified as 10uA for Vcb=75V and 10nA for Vcb=60V

 

[IRstuff]

Please use the correct terminology. Microsemi's datasheet clearly calls Icbo "collector-base cutoff current." Your usage of "saturation current" is very confusing.

Just to end this charade, leakage current is a function of both voltage and temperature.

TTFN