siggi84
Electrical
- Mar 19, 2009
- 11
Hi, I am using Ansys to calculate temperature distributions in nanostructures. I am doing thermal-electric analysis in 3D and I am using the solid69 element.
The structure is made of silicon, silicon dioxide and platinum. On top of a thin silicon dioxide layer I have a nanowire which is heated resistively (by applying a voltage we get power dissipation P=I*V). Under the thin silicon dioxide layer I have thick layer of silicon.
My problem is that when I use the same thermal conductivity for both silicon dioxide and silicon I get convergence and everything works (k=1.36 W·m?1·K?1), but when I increase the thermal conductivity of silicon more the ~20 W·m?1·K?1 I always get divergence (the real value is around 150 W·m?1·K?1).
I have mostly been using the ICCG Solver and the PCG solver. I am using between 1 and 2 million nodes so I can not use the sparse solver.
What can be the reason for this? What can I do to get convergence?
The structure is made of silicon, silicon dioxide and platinum. On top of a thin silicon dioxide layer I have a nanowire which is heated resistively (by applying a voltage we get power dissipation P=I*V). Under the thin silicon dioxide layer I have thick layer of silicon.
My problem is that when I use the same thermal conductivity for both silicon dioxide and silicon I get convergence and everything works (k=1.36 W·m?1·K?1), but when I increase the thermal conductivity of silicon more the ~20 W·m?1·K?1 I always get divergence (the real value is around 150 W·m?1·K?1).
I have mostly been using the ICCG Solver and the PCG solver. I am using between 1 and 2 million nodes so I can not use the sparse solver.
What can be the reason for this? What can I do to get convergence?