Etching SiC

[AEH3]

I am trying to etch the grain boundaries of some polished SiC materiallography specimens to look at grain size/shape. I have used boiling Murakami etchant (KFe(CN)6:NaOH:10 H2O)for up to 15 minutes. Sometimes it works, sometimes it doesn't. I mix it up fresh each time because I understand it degrades quickly.

How about plasma etching? I have read that a CF4/O2 plasma works. I have a microwave plasma unit and am trying to decide if it is worth buying the gases and dealing with the safety issues.

Thanks,
AEH

 

[EdStainless]

Have you tried any HF containing etchants? I can think of two that are both water based.
1. 20% Nitric with 5% NF
2. 25% Nitric, Glacial acetic and HF (both 15%), with a few drops of Bromine

And please be careful.

You might try contacting one of the manufactures, like Coors, and asking.

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