Single crystal pure Si is very strong and fatigue insensitive. (For essentially flaw free material, static strength in the (110) direction can be around 5000 - 7000 MPa, 700 - 1000 ksi.)
However, it might still pay to stress the beam properly. Even at MEMS scales classical stress concentrations occur.
If so, then you will need an allowable stress for whatever operations the beam is performing in whatever crystal direction is along the beam, and then assess what permissible stress concentration (times the basic beam stress) can occur.
As jedward points out, manufacturing such a feature accurately is another issue.