HowardHiew
Electrical
- Nov 17, 2014
- 4
Hi,
If there is oxide remaing on a blanket silicon wafer (assume <50A, Ptype 0100), if this wafer go through a high temperature oxide grow (1100C, N2/O2/TLC), will there be a enlargement on the remaining oxide thickness compare to 0A oxide area?
If yes, what is the mechanism? is it TLC or dryox effect?
If there is oxide remaing on a blanket silicon wafer (assume <50A, Ptype 0100), if this wafer go through a high temperature oxide grow (1100C, N2/O2/TLC), will there be a enlargement on the remaining oxide thickness compare to 0A oxide area?
If yes, what is the mechanism? is it TLC or dryox effect?
