The end of Mores Law, Whats next?

[GottaGetRich]

I joined this forum to see if I could get some feedback on this, Any one here working at any of the Chip Fabs? or big shops, IBM, INTEL, ARM type places? any one herd of this tech coming down the pipe from upstairs? Could any one who knows any one ask them if they have herd about it? I don't know, is it real?

They are talking 100x speed over silicon and saying their process fits right into existing lithography capable facilities no retrofit required?

http://www.ibkcapital.com/technology/overview/

BK Capital raised $12.6 million for POET Technologies Inc. (formerly OPEL Technologies Inc.) to develop its POET platform. POET is an integrated circuit platform that will power the next wave of innovation in integrated circuits, by combining electronics and optics onto a single chip for massive improvements in size, power, speed and cost. The company’s current IP portfolio includes more than 34 patents and 7 pending. POET’s core principles have been in development by Chief Scientist Dr. Geoff Taylor and his team at the University of Connecticut for the past 18 years, and are now nearing readiness for commercialization opportunities.

Key benefits of the POET platform include:

100x speed improvement over CMOS silicon (silicon hits a “power wall” at about 4 GHz that has limited circuit speeds to about 3.2 GHz over the last 10 years);
10-100x power efficiency improvement over CMOS silicon (depending on application);
Flexible application that can be applied to virtually any technical application, including memory, digital/mobile, sensor/laser and electro-optical, among many others; and,
No retrofit or other modifications to existing silicon fabs required – Since POET/PET are CMOS technologies fabricated using standard lithography techniques, they are easily integrated into current semiconductor production facilities extending the profitable utilization of fabrication equipment and production lines that would otherwise be considered at the end of life.
Potential applications include:

POET’s technology can surpass speed limits of widely used CMOS silicon chips and is much better positioned for stacking multiple chips to increase performance;
A functional POET device may reduce the power consumption of laptops, tablets, smartphones, servers, and/or other electronic devices by 80%;
Leads to drastic reduction in device size and battery power consumption – Power reduction in commercial-scale server farms represents tremendous cost savings to companies like IBM, Google and Intel – In November 2011, Hewlett Packard announced that it is working with numerous chip manufacturers to create ultraefficient, low-energy servers aimed at companies running large scale remote computing operations such as Twitter and Facebook; and,
POET can also produce an infra-red sensor for use in air, sea, ground, and space with sensitivity that is an order of magnitude higher than existing technology

 

[IRstuff]

sounds like a bunch of HYPERBOLE!!

http://www.poet-technologies.com/the-poet-platform/[/URL]]10-100x power efficiency improvement over CMOS silicon (depending on application)

http://www.poet-technologies.com/the-poet-platform/[/URL]]No retrofit or other modifications to existing silicon fabs required – Since POET/PET are CMOS technologies fabricated using standard lithography techniques

after 18 years!!! of development, they are still productless. And they are so proud of "a proprietary, (patented) mating technique" that they seemingly forgot that it was the very open-architecture of the PCs that allowed that market to explode with products. Their long term approach is the CHFET, which is GaAs-based, and has been lurking about for at least 15 years, with nary an impact on the marketplace. Note that Honeywell is still searching for a development partner after 4 years...

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[GottaGetRich]

Thanks for the reply IRstuff, interesting perspective on this topic. I did notice and bock at the 18 years of R&D but after researching other companies that have tried to achieve true monolithic ICs targeting fast completions by throwing tones of money at the problem rather then taking the time to slowly iron out the wrinkles I accepted that aspect and looked deeper into what POET is and how close they are to having a ready commercially viable solution.

Over the past decade it has been apparent that there is not much room for performance improvements in silicon without adding expensive elements for optics and the R&D development budgets being expended by the big's are extremely large as they continue their quests towards smaller and smaller transistors.

Here is a link to a paper by the scientist/company reflecting on current technology in their eyes the short comings and how POET is a solution both short term and long term.

http://www.poet-technologies.com/wp...ical-Interconntion-of-High-Speed-Circuits.pdf

I read an article yesterday quoting Intel’s former chief architect Bob Colwell:
here is the link for any one interested:
he also slams the GaAs-based solutions III-V materials and Graphene as being potential solutions. But is it due to vested interests? or is there truly no viable solution on the horizon?

Published on August 30th, 2013
Written by: Joel Hruska

http://www.extremetech.com/computin...itect-moores-law-will-be-dead-within-a-decade

 

[VEBill]

It's been noted that most everyone overestimates the amount of technogical change that will occur over the short term, and everyone underestimates it over the long term. This rule applies in this case.

On the other hand, integrating optical systems onto ICs is like apple pie. Who could possibly be against that? It might be useful for some applications.

 

[IRstuff]

Yeah, much of the other stuff, I got from that singular white paper. That's where the mention of CHFET occurred. I should point out that GaAs is the implied technology of the future, but then again, 30 years ago, when I worked at McD, GaAs was the technology of the future.

The POET guys claim way more gain than is realistic, given that they're only dinking with the I/O. Given that many PCs run substantially faster with SSDs, the I/Os are still a 2nd or 3rd order impact on overall system speed. I can see that there might be limited scenarios where POET would make lots of sense, like in a packet switching context. Their claims only address power in the white paper, running about 1/10th the power at the same datarate, but nothing that suggests that they can run 150 Gb/s, which is their primary claim of 10x speed improvement.

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[GottaGetRich]

IRstuff, I looked at your profile and saw you have experience in the field EO Systems Engineering, Targeting and surveillance systems.
I believe POET claims their tech can be used in Targeting and surveillance. They have been funded by NASA and the military for 19 years developing lasers IR sensors and thyristor arrays. I have marked their statement regarding this below in bold.

POET has seen early traction in two specific markets:

• Depending on application, POET can reduce overall OE transceiver cost by 60 to 90%
• Memory and Storage
• Current memory types include dedicated SRAM, DRAM, and NVRAM devices
• POET/PET memory cell can concurrently support all three memory types
• Massive simplification at system level due to elimination of NVRAM backup/recovery
• Much lower bit error rates than silicon-based memories (several orders of magnitude)
• Sensors and Weapons
• POET provides low-cost optical thyristor arrays that can be used as dual-mode sensor/laser
arrays (same panel can find targets and destroy them)
• Main reason US Government funded research for so long (19 years and counting…)
• CMOS Silicon
• Final CMOS Si geometry (10/11 nm) is under development now; first production 2015?
• POET/PET offer about 100x speed improvement over CMOS silicon
• POET/PET offer 10-100x power efficiency improvement over CMOS silicon
• OE Conversion
• As example, current 10 Gigabit Ethernet transceivers use about 10 individually packaged
ICs on a substrate in a die-cast housing; POET can reduce this to 1 individually packaged
IC
• Depending on application, POET can reduce overall OE transceiver cost by 60 to 90%
• Memory and Storage
• Current memory types include dedicated SRAM, DRAM, and NVRAM devices
• POET/PET memory cell can concurrently support all three memory types
• Massive simplification at system level due to elimination of NVRAM backup/recovery
• Much lower bit error rates than silicon-based memories (several orders of magnitude)
• Sensors and Weapons
• POET provides low-cost optical thyristor arrays that can be used as dual-mode sensor/laser
arrays (same panel can find targets and destroy them)
• Main reason US Government funded research for so long (19 years and counting…)



POET has seen early traction in two specific markets:

Commercial – Progress in the commercial electronics industry over the past four decades has both driven and been driven by the industry’s ability to create and serve markets with faster, cheaper, and smaller monolithic integrated circuits. Each product advance in turn becomes the driver for the next wave of IC technology. Today however, this paradigm is falling short. Particularly in the arenas of optoelectronics and very high-speed mixed-signal circuits, current silicon ICs will not suffice, and no good monolithic technology exists. POET is perfectly positioned to address this technology void thus advancing product offerings in PCs, communications and many consumer devices which have been historically powered by technology breakthroughs such as POET.

Military – POET provides military and aerospace systems with integrated digital, radio frequency (RF) and optical technologies in a single device. POET’s technology platform for optoelectronic integration exploits the optoelectronic and electronic behaviors of Gallium Arsenide (GaAs) semiconductor material. One of the benefits of this material, from a space electronics perspective, is that GaAs is significantly less susceptible to x-ray and gamma-ray total integrated dose (TID) radiation. GaAsis the long-standing choice for high-frequency (e.g. RF) devices and circuits. Important to the military is POET’s ability to integrate digital, RF, and optical technologies in a single device and this makes POET an important, high-performance solution that satisfies documented needs for multiple space systems and all Military Departments and Agency Tech Areas.

 

[IRstuff]

I can't speak to why the government would waste their money over 19 years with nothing to show for it; obviously, they must be good salesmen. There's no data, no test devices, nada.

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[GottaGetRich]

pictures didn't load.

http://photonicssociety.org/newsletters/apr99/select.htm

Compiled by:
Eric Donkor
Department of Electrical & Systems
Engineering
University of Connecticut
Storrs, CT. 06269
Tel: (860) 486-3081
Fax: (860) 486-2447
Email: donkor@ee.uconn.edu

This article presents selected research activities in Lasers and Electro-Optics by a number of faculty members at the University of Connecticut (UConn). They give only a snap shot, and by no means representative, of the wide range of faculty research, par excellence, in Lasers and Electro-Optics at UConn. The contributors are Profs. Geoff Taylor, Eric Donkor, Faquir Jain, and Mehdi Anwar, all from the Department of Electrical and Systems Engineering, and Prof. Niloy Dutta from the Physics Department.

Prof. Taylor describes an optoelectronic integrated circuit (OEIC), for high-speed analog-to-digital (AD) conversion, which provides direct optical output. An attractive feature of the OEIC is that it can be configured dynamically to perform high-speed electrical and optical signal processing. A compact (1-5 cm) fiber-based all-optical switch is the essence of Prof. Donkor’s topic. A major part of this work involves the development of highly nonlinear silica fibers. Current effort is directed towards the development of semiconductor-doped fibers. Prof. Dutta presents novel network concepts and enabling technology for optical data communication with throughput upwards of 100 Gb/s. Prof. Anwar’s topic focuses on experimental and theoretical work on semiconductor quantum well infrared detectors for the 4-24mm wavelength region. The impact of carrier escape and capture times, and how these phenomena affect infrared detector performance, through phonon scattering and quantum-mechanical tunneling are emphasized. Prof. Jain (with faculty collaborators and industrial affiliates) describes two current research activities namely: 1) development and fabrication of semiconductor multiple quantum well devices (MQW) for implementing optical control of phased-array systems, and 2) advanced material development for full-color flat-panel displays. Prof. Javidi’s research in optical signal processing and communications are directed primarily towards secure communication and identification. The system he describes has practical application in areas such as telebanking, telecommunication, personal identification, and law enforcement. A list of names and contact information for faculty whose research in optics/photonics were not featured, due to space and time constraints, appear at the end of the article.

Optoelectronic Thyristor Based
Photonic Smart Comparator for
Analog-to-Digital Conversion -
G.W.Taylor

Integrated Optoelectronic circuits are being investigated as the basis for high sample rate and high resolution Analog-to-Digital (AD) conversion. The AD conversion process consists of three primary functions which include generation of a high speed, low jitter clock pulse (aperture time constant to within several femtoseconds), a high speed sample and hold (S/H) circuit and a quantizer circuit. Optical devices can significantly improve the dynamic range of the S/H and the quantizer, and mode locked lasers are projected to meet the demands of clock stability. Initial work has been upon the implementation of the quantizer and a significant step forward has been achieved by the introduction of an optoelectronic (smart) comparator circuit. The comparator is based upon the functionality of an optoelectronic thyristor. The thyristor incorporates a comparator that can provide non-linear thresholding function with either an electrical or an optical input as shown in Figure 1. Furthermore, when switched to the on state it functions as a laser and thus, it provides the digital output optically. HFETs are integrated on-chip with the thyristor, and serve as load devices, and to implement differential amplifiers and other electronic functions. High speed switching is obtained in this structure due to the absence of stored charge.

uconn1.gif (6800 bytes)

Figure 1. Voltage/Current and Power/Current Characteristics of the Optoelectronic Thyristor.

Figure 2 illustrates the circuit design of single smart comparators, and their concatenation to produce an N bit A/D converter. The third terminal (source) provides the thyristor with sensitive control over the switching parameters Vsw and Isw, and can be used to initiate switching of the thyristor. It is essential for the comparator operation. The third terminal operation of the thyristor is required to implement the comparator function. The reference voltage of the comparator is Vref = Vbias– Vh, where Vbias is the thyristor bias voltage, the input signal is the source voltage Vin, and the output of the comparator is the subcollector voltage Vout= Vsc (see Fig.2). This thyristor has a p type emitter so to enable positive supply voltages; the emitter is biased to the supply. Then with a voltage of Vin < Vbias – Des applied to the third terminal input, where Des is the emitter to source voltage required to switch the thyristor, the thyristor will be switched “on” to the low impedance state. This gives a “high” value for the subcollector voltage as Vout = Vbias – Vh. When Vin > Vbias – Des, the thyristor will remain in the off state which is the high impedance state. The subcollector voltage now attains a “low” value of Vout = 0. However, the situation of Vin < Vbias – Des for Vout = “1” and Vin > Vbias – Des for Vout = “0” does not meet the requirements of the ADC comparator and must be reversed so that digital outputs are changing from “0” to “1” as analog signals become larger than threshold, which is done with a differential amplifier to complement the input.

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Figure 2. A/D Conversion with N bits of accuracy using N cascaded smart comparators.

The negative input of the DA is the input Vin and the positive input of the DA is Vcompl = Vbias +Vref – Des (1), so that Vout (DA) = Vbias + Vref – Des Vin (2) When Vin > Vref, then Vout (DA) < Vbias – Des, and switching occurs so that Vout = “1” and laser emission is obtained from the thyristor, which means the optical output is “1”. Since Vref = Vbias – Vh, the voltage value of Vsc = Vref =’1” for this case. In the other situation, when Vin < Vref, then Vout (DA) > Vbias – Des, so that Vsc = “0”, and no light is emitted from the thyristor, which means the optical output is “0”. This comparator structure can be easily extended to form the basic unit of the A/D converter. At the output of the thyristor, another DA is used to subtract Vsc from the input signal Vin. The output of this second DA is the output of the basic unit which is Vout = Vin for no switching or Vout = Vin – Vref for switching. Then Vout becomes the input to the next stage. By using a gain of 2 in each bit structure, Vsc of the thyristor is identical between stages although it represents a different weight corresponding to the particular bit. Thus the architecture and the circuit design of each bit are identical.

The operation of the smart comparator is shown in Fig.3 that displays both the electrical and optical switched states using individual devices. The device parameters were a switching voltage Vsw of 6.25V, a holding current Ih of 5mA and a laser threshold current Ith of about 50mA. Current research is aimed at integrating all components to achieve VCSELs with low threshold currents.

uconn2a.gif (32447 bytes)

Figure 3. Transfers function of a single stage comparator.

Low-Power Fiber-Based All-Optical Switching -
E. Donkor

Research work in this area focuses on the fabrication of highly nonlinear optical fibers, and their use in implementing compact fiber-based low-power ultra-fast all-optical switching functions. A switching architecture being investigated in our laboratory is shown in figure 4. At the core of the structure is a semiconductor-doped silica fiber that serves as Kerr nonlinear medium. To date we have fabricated prototype CdSSe-doped optical fibers that exhibit enhanced third-order optical nonlinearity.

The operation of the switch is based on wavelength shift of the probe as it copropagates with the pump in the nonlinear fiber. The peak transmission wavelength of the grating lg, differs from the probe signal wavelength ls, such that the difference Dl = lg - ls, is of the order of the grating bandstop. Thus with the pump off, the grating reflects the probe which corresponds to the OFF-state of the switch. On the other hand with the pump on, the grating transmits the probe due to the wavelength shift. This corresponds to the ON-state of the switch.

Figure 4 depicts the pump being modulated by a control data stream “1010101”, which may be optical or electrical signals, such that the output of the pump has the same format as the control. If now the modulated pump copropagates with the probe in the nonlinear fiber, switching of the probe signals occur producing an output data with the same format as the control data.

uconn4.gif (8544 bytes)

Figure 4. Schematic diagram of grating assisted low-power all-optical switch.

The threshold power for switching depends on the grating bandstop and does not require a p-phase shift, as is the case in interferometric devices. The relaxation of the p-phase shift condition for complete switching, coupled with the high non-linearity of the doped-fiber, enables us to implement compact (1-5 cm ) switching structures that can be activated at diode laser power levels.

Optical Transmission - Niloy Dutta

Future communication networks for commercial and/or military application may carry time division multiplexed data at rates of 100 Gb/s or higher. The speed of electronic circuits necessary to count the bits ( 1`s and 0`s ) and thereby retrieve the message is limited to ~ 30 Gb/s using the extrapolations of current Si , GaAs or InP material based technology. Therefore a new way must be found to generate data at speeds near 100 Gb/s and retrieve the information from such a high speed data stream. Optical multiplexing and demultiplexing are important techniques for the generation and retrieval of high speed data.

We have a research program on high speed (160 Gb/s) optical transmission. Short pulses from mode locked lasers and gain switched lasers are further compressed, coded and optically multiplexed to generate the data. At the receiver, the encoded data is first demultiplexed using four-wave mixing in a semiconductor amplifier to much lower data rate bit streams from which the information is retrieved using conventional electronic receivers.

Quantum Well Infra-Red Photodetectors - M. Anwar

Surveillance in the infra-red part of the electromagnetic spectrum demands innovative concepts to design quantum well (QW) detectors for wavelengths beyond 12 mm. The requirement of low tunneling current and superior transport properties make InAs-InxGa1-xSb, a type II superlattice, suitable candidate material for infra-red applications. Strain-induced band gap variation and wavelength controllability using the superlattice period enables one to use this system over a broad wavelength range of 4-24 mm. The use of closely coupled QWs in each of the superlattice period will (a) decrease dark current (b) increase absorption coefficient and (c) suppress shot noise.

uconn5.gif (4908 bytes)

Figure 5. Absorption coefficient of a 20 period InAs/GaInSb QWIP operating at room temperature.
Superlattice structures using AlGaAsSb/InGaAsSb is currently under investigation.

In Fig. 5 the absorption coefficient of a 20 period InAs/ Ga1-xInxSb superlattice is shown. The structure is grown by atmospheric pressure horizontal MOCVD, using n-GaAs wafers as substrate. TMGa, TMIn, TMSb, TMAl and TBAs are used as organometallic sources for gallium, indium, antimony, aluminum and arsenic, respectively. For the growth of type-II structures a GaInSb buffer layer on n-GaAs (substrate) is used. Devices are fabricated by wet chemical etch following standard techniques. I-V measurements are performed by putting AuGe/Ni contacts.

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Figure 6. Experimental (solid) and theoretical (open square) electron escape time in AlGaAs/GaAs QWIPs

Currently, in high performance systems, lasers are no longer directly modulated. The CW light from lasers are modulated by “Electroabsorption Modulators” and carrier transport effect affects device performance. Carrier escape and capture times and their dependence upon phonon scattering and tunneling in quantum structures are investigated. The agreement of the calculated electron escape time with experimental data is shown in Fig. 6 [IEEE JQE, vol. 33, p. 187, 1997]. The structure considered is a AlGaAs/GaAs/AlGaAs quantum well with 200Å barriers, 96Å wells and a conduction band offset of 0.1621eV. The calculation is performed using the logarithmic derivative approach to solve Schroedinger equation and the field induced redistribution of density of states. In Fig. 7, the tunneling escape time and the electron-phonon transition time is shown. At low fields phonon assisted transition is important, however at high fields tunneling is the dominant process. This observation is supported by Fig. 7, where at low field electron escape time is dominated by thermionic emission followed by tunneling at high fields. The calculations of carrier dynamics, dark current and responsivity is extended to GaN based material system. The theoretical calculations show a great reduction in dark current at near infra-red as compared to their AlGaAs/GaAs counterpart.

uconn7.gif (8664 bytes)

Figure 7. Tunneling escape time and electron phonon transition time as a function of applied field.

Quantum Well/Dot Based Devices For Optically Controlled
Phased Array Radar and High Performance Flat Panel Displays –
F. C. Jain, R. Bansal, J. Ayers and F. Papadimitrakopoulus

F. Jain and R. Bansal have been working with Raytheon Electronic Systems team (J. Priess, F. Horrigan, J. Annis, and M. Russell of Sudbury, MA) to develop tunable lasers, optical modulators and filters to implement a WDM based Optically Controlled Phased Array Radar architecture. Recently, we reported an InGaAsP-InP multiple quantum well (MQW) optical modulator designed for 1.55 micron that operates at relatively low bias voltage (~2.5 Volt). Earlier, the UConn group demonstrated one of the highest reported tunable contrast ratio of 1200:1 at 980 nm using a Fabry-Perot modulator consisting of InGaAs-GaAs MQW cavity in collaboration with the United Technologies Research Center team. Both projects were supported by the Office of Naval Research (Dr. William Miceli, Program Monitor). More recently, the UConn team has obtained birefringence in InGaAs-GaAs MQWs under normal incidence by producing strain (which breaks the in plane symmetry) by launching a surface acoustic wave (SAW). Work is in progress to integrate birefringence and electrorefraction in MQWs to obtain low-voltage, high-contrast modulators.

In addition, F. Jain, F. Papadimitrakopoulos, and J. Ayers are working to develop an efficient full-color nanophosphor for flat panel displays in collaboration with E-Lite Technologies (Stratford, CT) with support from the Ballistic Missile Defense Organization (NSWC, Dahlgren, VA, program manager Dr. T. K. Oh).

Optical Signal Processor for Anti-Counterfeiting and Security Systems – B. Javidi.

Research by B. Javidi include optics for security of information which has applications to communications as well as verification and non-duplication [see 1) B. Javidi, Physics Today, vol. 50, no. 3, March 1997, and 2) B. Javidi and J. L. Horner, Optical Engineering, vol. 33, no. 6, June 1994]. A new scheme of complex phase/amplitude patterns that cannot be seen and cannot be copied by an intensity sensitive detector such as a CCD camera is utilized. The basic idea is to permanently bond a phase mask to a primary identification amplitude pattern such as a fingerprint, a picture of a face, or a signature for verification of the authenticity of items bearing the pattern. Both the phase mask and the primary pattern are separately readable and identifiable in an optical processor or correlator. The phase portion of the pattern consists of a two-dimensional phase mask that is invisible under ordinary light. The large dimensions of the mask make it extremely difficult to determine the contents of the mask. Only the authorized producer of the card knows the code in the mask. One cannot analyze the mask by looking at the card under a microscope or photographing it, or reading it with a computer scanner in an attempt to reproduce it.

The phase mask can be used alone. For example it can be affixed to a product such as a computer chip and read by an optical correlator to verify authenticity. The phase mask cannot be removed without destroying it, making it impossible for a counterfeiter to place the mask over their fingerprint or picture. The phase mask can be a thin sheet of transparent plastic attached to the primary pattern with a strong bonding agent. In an attempt to tamper with the card by substituting a new fingerprint in place of the original one, the phase mask would be destroyed upon separation. The phase mask can be represented mathematically by the function exp[jM(x,y] where M(x,y) is a continuous or quantized real function. Let us assume that M(x,y) is a random function. An intensity sensitive detector will not be able to detect this phase-encoded pattern. With the high resolution of commercially available optical films and materials, M(x,y) can be of the order of a million pixels, and yet the mask size will be only a few square millimeters. The mask is attached to the primary pattern or an object to be protected and will operate in either a transmissive or reflective mode. A variety of other techniques can be used to synthesize the phase masks. The masks can be fabricated by embossing techniques on thin plastic materials, such as are used to imprint the hologram on conventional cards. Techniques such as those used to make refractive or binary optics could be employed, as well as bleaching techniques on photographic film.

The verification system that reads the card could be one of several coherent optical processor architectures. Verification can be done using a joint transform correlator (JTC) or a frequency plane optical correlator. In a frequency plane correlator, an object or primary pattern g(x,y) whose authenticity is to be verified, consisting of an amplitude gray scale pattern to which a phase mask has been bonded, is placed in the input plane of the processor. The phase mask may be superimposed over a fingerprint or an image on an ID or credit card. Coherent light illuminates the complex mask, extracting the signal by reflection, or the light can be transmitted through a transparent portion of the card. The processor has an a priori knowledge of the mask exp[jM(x,y)]. A spatial filter is placed in the Fourier plane. The spatial filter made for verifying the phase mask could be a variety of matched filters or spatial filters. The input mask pattern is Fourier transformed by the lens and the Fourier transform is multiplied by the spatial filter’s transfer function. The second Fourier transform lens produces the correlation spot at the output and is detected by the CCD image sensor. If the spatial filter matches or has a high degree of correlation with the input phase mask, a high intensity spot will be detected by the CCD sensor and if the intensity therefore exceeds a predetermined level, an authenticity verification signal is produced. If the input phase mask is a counterfeit, the intensity of the correlation spot will be below the threshold established at the output.

A comprehensive listing of sponsors for the contributing authors, for their research work, could not be contained in this article. Nonetheless, we acknowledge our indebtedness to the many government agencies and industrial sponsors whose continued support for our work underscores our achievements.

List of UConn faculty (and email addresses) with
Optics/Photonics related research activities.

Geoff W. Taylor (gwt@engr.uconn.edu)
Optoelectronic devices and integrated circuit; advanced materials.

Niloy Dutta (niloy@eng2.uconn.edu)
Semiconductor lasers; optical amplifiers; optoelectronic devices; quantum well devices;
fiber-optic transmission systems

Mehdi A. F. Anwar (anwara@engr.uconn.edu)
Fabrication and modeling of quantum size effect devices.

Faquir C. Jain (fcj@engr.uconn.edu)
Fabrication and modeling of semiconductor devices for
micro/optoelectronics, blue-green lasers

Bahram Javidi (bahram@brc.uconn.edu)
Optical signal processing, information and pattern recognition, neural networks.

Peter Cheo (pkc@engr.uconn.edu)
Electrooptics, optoelectronics, and fiber optics.

Chandra Roychoudhuri (chandra@engr.uconn.edu)
Semiconductor lasers for sensing, spectroscopy and optical metrology.

Edward E. Eyler (eyler@phys.uconn.edu)
Measuring the properties of far-UV laser light; coherent control using nanosecond lasers;
experimental test of the symmetrization postulate of quantum mechanics.

George Gibson (gibson@main.phys.uconn.edu)
Optimization of a short-pulse (< 30 fsec) high-power (> 100 GW) laser system;
development of a versatile short-pulse pump/probe system for time-resolved spectroscopy;
investigation of the M multiphoton ionization of atoms and molecules with ultrashort laser pulses.

Phillip L. Gould (gould@uconnvm.uconn.edu)
Diode laser stabilization; collisions of laser-cooled atoms; ultracold rydberg atoms and
plasmas; photoassociation and ultracold molecules.

Doug Hamilton (hamilton@phys.uconn.edu)
Synthesis and evaluation of novel solid state laser crystals; ultraviolet spectroscopy of solid state laser crystals.

Juha Javanainen (jj@phys.uconn.edu)
Theory surrounding Bose-Einstein condensation, optical phenomena for ultra-cold systems.

Winthrop Smith (winthrop@uconnvm.uconn.edu)
Collisions involving laser-excited atoms; atomic and molecular Ions.

William C. Stwalley (stwalley@uconnvm.uconn.edu)
Photoassociative spectroscopy of ultracold atoms; laser multiple resonance spectroscopy of
metallic diatomic molecules; laser ionization spectroscopy and laser-induced plasmas in metal vapors.

 

[IRstuff]

Please do not copy/paste material from other sites, particularly in the massive manner you used.

Your link is from 4 years ago, so what's the point here? Few of those prognostications have come to pass.

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